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YZPST-RGN700C29D8

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Product details
P/N:YZPST-RGN700C29D8
700V Super-GaN
700V 58A 80mΩ Super GaN in DFN8*8 Datasheet
Features
Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
No reverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according to JEDEC Standards
ESD safeguard
RoHS, Pb-free, REACH-compliant
Applications
AC-DC converters
DC-DC converters
BCM/DCM totem pole PFC
Fast battery charging
High density power conversion
High efficiency power conversion
YZPST-RGN700C29D8

Key performance parameters at Tj = 25 °C

 

Parameter

Value

Unit

VDS,max

700

V

RDS(on),max @ VGS  = 6 V

80

QG,typ @ VDS  = 400 V

6.2

nC

ID,pulse

58

A

QOSS @ VDS  = 400 V

60

nC

Qrr @ VDS = 400 V

0

nC

 

Maximum ratings at Tj = 25 °C unless otherwise specified

 

Parameter

Symbol

Values

Unit

Note/Test Condition

Drain source voltage

VDS,max

700

V

VGS = 0 V,

Tj = -55 °C to 150 °C

Drain source voltage transient 1

VDS,transient

800

V

VGS = 0 V

Drain source voltage, pulsed 2

VDS,pulse

750

V

Tj = 25 °C; total time < 10 h

Tj = 125 °C; total time < 1 h

Continuous current, drain source

ID

29

A

Tc = 25 °C

Pulsed current, drain source 3

ID,pulse

58

A

Tc = 25 °C; VGS  = 6 V; tPULSE = 10 µs

Pulsed current, drain source 3

ID,pulse

29

A

Tc = 125 °C; VGS  = 6 V; tPULSE = 10 µs

Gate source voltage, continuous

VGS

-6 to +7

V

Tj = -55 °C to 150 °C

 

Gate source voltage, pulsed

 

VGS,pulse

 

-20 to +10

 

V

Tj = -55 °C to 150 °C;

tPULSE  = 50 ns, f = 100 kHz; open drain

Power dissipation

Ptot

188

W

Tc = 25 °C

Operating temperature

Tj

-55 to +150

C

 

Storage temperature

Tstg

-55 to +150

C

 

Package outlines

YZPST-RGN700C29D8 Package outlines
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7 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode , Silicon Transistor, Bridge Rectifier

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