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|
VRRM (1) |
VRSM (1) |
|
9000 |
9100 |
|
Repetitive peak reverse leakage |
IRRM |
10 mA 50mA |
Conducting - on state
|
Parameter |
Symbol |
Min |
Max. |
Typ |
Units |
Conditions |
|
Max. Average value of on-state current |
IF(AV)M |
|
550 |
|
A |
Sinewave,180oconduction,Tc=100oC |
|
RMS value of on-state current |
IF(RMS)M |
|
860 |
|
A |
Nominal value Tc=100oC |
|
Peak one cycle surge (non repetitive) current |
IFSM |
|
11 |
|
kA |
Tj=175°C, VR=0,8VRRM, tp=10ms |
|
I square t |
I2t |
|
605 |
|
kA2s |
10 msec |
|
Peak on-state voltage |
VF |
|
3.20 |
|
V |
IF = 1200 A; Tj =160 oC |
|
threshold voltage |
VF0 |
|
1.04 |
|
V |
|
|
slope resistance |
rT |
|
1.80 |
|
mΩ |
|
|
Reverse Recovery Current (4) |
IRM(REC) |
|
- |
|
A |
IFM = 1000 A; dIF/dt = 10 A/μs, Tj = 150 oC |
|
Reverse Recovery Charge (4) |
Qrr |
|
- |
- |
μC |
|
|
Reverse Recovery Time (4) |
tRR |
|
- |
|
μs |
|
THERMAL AND MECHANICAL CHARACTERISTICS
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+160 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+160 |
|
oC |
|
|
Thermal resistance - junction to case |
RΘ (j-c) |
|
31.5 |
|
K/KW |
Double side cooling |
|
Thermal resistance - case to sink |
RΘ (c-s) |
|
6 |
|
K/K/W |
Double side cooling |
|
Thermal resistance - junction to sink |
RΘ (j-s) |
|
- |
|
K/kW |
Double side cooling |
|
Mounting force |
P |
10 |
16 |
- |
kN |
|
|
Weight |
W |
|
|
250 |
g |
about |
CASE OUTLINE AND DIMENSIONS
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
