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Maximum ratings (Tj=25℃ unless otherwise specified)
|
Symbol |
Parameter |
Test conditions |
Value |
Unit |
|
VDS |
Drain-Source Voltage |
|
1200 |
V |
|
ID |
Continuous Drain Current |
Tc=25°C Tc=100°C |
74 52 |
A |
|
IDM |
Peak Drain Current |
Pulse width tp limited by Tjmax |
150 |
A |
|
VGSmax |
Gate-Source Voltage |
|
-8/+22 |
V |
|
VGSop |
Recommend Gate-Source Voltage |
|
-4/+ 18 |
V |
|
Ptot |
Power Dissipation |
Tc=25°C Tc=100°C |
312 156 |
W |
|
Tj |
Operating Junction Temperature |
|
-40~175 |
°C |
|
Tstg |
Storage Temperature |
|
-40~175 |
°C |
Electrical Characteristics
Static Characteristics
|
Symbol |
Parameter |
Test conditions |
Value |
Unit |
||
|
Min. |
Typ. |
Max. |
||||
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
ID=100μA, VGS=0V |
1200 |
|
|
V |
|
IDSS |
Zero Gate Voltage Drain Current |
VDS=1200V, VGS=0V |
|
1 |
|
μA |
|
IGSS |
Gate-Source Leakage Current |
VDS=0V, VGS=18V |
|
|
250 |
nA |
|
VGS(th) |
Gate Threshold Voltage |
VDS=VGS, ID=10mA Tj=25°C Tj=175°C |
2 |
2.6 2.0 |
4 |
V |
|
RDS(on) |
Drain-Source On-State Resistance |
VGS=18V, ID=40A Tj=25°C Tj=175°C |
|
37 47 |
|
mΩ |
Package Outlines
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
