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Maximum Ratings （Tj= 25℃ unless otherwise specified）
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-Emitter Breakdown Voltage |
VCE |
650 |
V |
|
DC collector current, limited by Tjmax TC = 25°C TC = 100°C |
IC |
80 40 |
A |
|
Diode Forward current, limited by Tjmax TC = 25°C TC = 100°C |
IF |
80 40 |
A |
|
Continuous Gate-emitter voltage |
VGE |
±20 |
V |
|
Transient Gate-emitter voltage |
VGE |
±30 |
V |
|
Turn off safe operating area VCE ≤650V, Tj ≤ 175°C, tp = 1μs |
- |
120 |
A |
|
Pulse collector current, VGE = 15V, tp limited by Tjmax |
ICM |
120 |
A |
|
Power dissipation , Tj=25°C |
Ptot |
188 |
W |
|
Operating junction temperature |
Tj |
-40...+175 |
°C |
|
Storage temperature |
TS |
-55...+150 |
°C |
|
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s |
- |
260 |
°C |
|
Mounting torque, M3 screw Maximum of mounting processes: 3 |
M |
0.6 |
Nm |
Thermal Resistance
|
Parameter |
Symbol |
Max. Value |
Unit |
|
IGBT thermal resistance, junction - case |
Rθ(j-c) |
0.8 |
K/W |
|
Diode thermal resistance, junction - case |
Rθ(j-c) |
1.1 |
K/W |
|
Thermal resistance, junction - ambient |
Rθ(j-a) |
40 |
K/W |
TO247 package information
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
