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Rectifier Diode RD8012

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Product details
RD30 30A Rectifier Diode
YZPST-RD3016
FEATURES
Glass passivated chip junction
High surge current capability
High voltage and Durability
APPLICATIONS
DCPower Supplies
Field Supply for DCmotors
Power Rectifiers
_20250514111440

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction  temperature range

Tstg

-55 ~ 150

Operating junction temperature range

Tj

-55~ 150

Maximum Repetitive peak reverse voltage

VRRM

1600

V

Maximum RMS Voltage

VRMS

1120

V

Maximum DC Blocking Voltage

VDC

1600

V

Average Forward Current

IF(AV)

30

A

Forward Surge Current (Non-repetitive) @60Hz Half-

sine wave, 1 cycle, Tj=25℃

 

IFSM

350

 

A

Typical junction capacitance VR=4.0V, f= 1MHz

 

CJ

 

150

 

pF

Thermal Resistances

Symbol

Parameter

Value

Unit

 

Rth(j-c)

 

thermal resistance junction to case

 

0.9

 

℃/W

 

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Parameter

Symbol

Value

Unit

Maximum instantaneous

forward voltage drop per diode @ IF=30A

VF

1.2

V

Maximum DC reverse current at rated DC blocking voltage per diode

Tj=25℃

 

IR

5

μA

Tj=150℃

1

mA

 
_20250514111907
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8 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module , Power Diode, Silicon Transistor, Bridge Rectifier

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