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Absolute maximum ratings(Ta=℃)
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VCBO |
Collector-base voltage |
Open emitter |
140 |
V |
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VCEO |
Collector-emitter voltage |
Open base |
140 |
V |
|
VEBO |
Emitter-base voltage |
Open collector |
5 |
V |
|
IC |
Collector current |
|
20 |
A |
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IB |
Base current |
|
5 |
A |
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IE |
Emitter current |
|
-25 |
A |
|
PD |
Total power dissipation |
TC=25℃ |
250 |
W |
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Tj |
Junction temperature |
|
200 |
℃ |
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Tstg |
Storage temperature |
|
-65~200 |
℃ |
THERMAL CHARACTERISTICS
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SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal resistance junction to case |
0.7 |
℃/W |
CHARACTERISTICS
Tj=25℃ unless otherwise specified
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
TYP. |
MAX |
UNIT |
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VCEO(SUS) |
Collector-emitter sustaining voltage |
IC=0.2A ;IB=0 |
140 |
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|
V |
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VCEsat |
Collector-emitter saturation voltage |
IC=5A; IB=0.5A |
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|
1.0 |
V |
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VBE |
Base-emitter on voltage |
IC=5A ; VCE=2V |
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2.0 |
V |
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ICEO |
Collector cut-off current |
VCE=140V; IB=0 |
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0.25 |
mA |
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ICEX |
Collector cut-off current |
VCE=140V; VBE(off)=1.5V TC=150℃ |
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0.1 2.0 |
mA |
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IEBO |
Emitter cut-off current |
VEB=5V; IC=0 |
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0.1 |
mA |
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hFE |
DC current gain |
IC=5A ; VCE=2V |
25 |
|
150 |
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Is/b |
Second breakdown collector current With base forward biased |
VCE=50Vdc,t=1 s, Nonrepetitive |
5 |
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A |
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VCE=100Vdc,t=1 s, Nonrepetitive |
1 |
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COB |
Output capacitance |
IE=0 ; VCB=10V;f=1.0MHz |
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|
1000 |
pF |
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fT |
Transition frequency |
IC=0.5A ; VCE=10V;f=0.5MHz |
2 |
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MHz |
PACKAGE OUTLINE
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module ,
Power Diode,
Silicon Transistor,
Bridge Rectifier
