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IGBT-Inverter
Maximum Rated Values
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VcEs |
Collector-Emitter Voltage |
TU=25℃ |
1200 |
V |
|
VGES |
Gate-Emitter Peak Voltage |
T=25℃ |
±20 |
V |
|
Ic |
Continuous DC Collector Current |
Tc=100℃ |
15 |
A |
|
cRM |
Repetitive Peak Collector Current |
tp=1ms |
30 |
A |
|
Ptot |
Total Power Dissipation |
Tc=25℃,Tvjmax=175℃ |
130 |
W |
Characteristic Values
|
Symbol |
Description |
Conditions |
Values |
Unit |
||
|
Min. |
Typ. |
Max. |
||||
|
VcE(sat) |
Collector-Emitter Saturation Voltage |
VGE=15V,Ic=15A,TU=25℃ |
--- |
2.12 |
--- |
V |
|
VGE=15V,Ic=15A,TU=125℃ |
--- |
2.48 |
-- |
V |
||
|
VGEth) |
Gate Threshold Voltage |
VGE=VcE,Ic=0.48mA |
|
5.6 |
|
V |
|
IcES |
Collector-Emitter Cut-Off Current |
VcE=1200V,VGE=0V |
--- |
--- |
1 |
mA |
|
GES |
Gate-Emitter Leakage Current |
VGE=20V,VcE=0V |
--- |
--- |
100 |
nA |
|
Cies |
Input Capacitance |
VcE=25V,VGE=0V,f=1MHz |
--- |
990 |
--- |
pF |
|
Coes |
Output Capacitance |
--- |
85 |
--- |
pF |
|
|
Cres |
Reverse Transfer Capacitance |
--- |
36 |
--- |
pF |
|
|
ta(on) |
Turn-on Delay Time |
VcE=600V VGE=±15V Ic=15A R₆=39Ω Inductive Load T₄=25℃ |
--- |
38 |
--- |
ns |
|
t. |
Turn-on Rise Time |
--- |
25 |
--- |
ns |
|
|
tdof) |
Turn-off Delay Time |
--- |
150 |
--- |
ns |
|
|
t |
Turn-off Fall Time |
--- |
180 |
--- |
ns |
|
|
Eon |
Turn-on Switching Loss |
--- |
1.11 |
--- |
mJ |
|
|
Eof |
Turn-off Switching Loss |
--- |
0.95 |
--- |
mJ |
|
|
lsc |
Short Circuit data |
VGE≤15V,Vcc=800V tp≤10μs,TU=150℃ |
--- |
62 |
--- |
A |
|
RithJC |
Thermal Resistance,Junction to Case |
Per IGBT |
--- |
--- |
1.15 |
K/W |
|
TvJop |
Virtual Junction Temperature |
Under Switching |
-40 |
--- |
150 |
℃ |
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
