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|
VRRM (1) |
VRSM (1) |
|
1000 |
1100 |
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
|
Repetitive peak reverse leakage |
IRRM |
7 mA 75 mA |
Conducting - on state
|
Parameter |
Symbol |
Min |
Max. |
Typ |
Units |
Conditions |
|
Max. Average value of on-state current |
IF(AV)M |
|
4655 |
|
A |
Sinewave,180oconduction,Tc=55oC |
|
RMS value of on-state current |
IF(RMS)M |
|
- |
|
A |
Nominal value |
|
Peak one cycle surge (non repetitive) current |
IFSM |
|
44.8 |
|
kA |
Tj=25°C, VR=0,8VRRM, tp=10ms |
|
I square t |
I2t |
|
10×103 |
|
kA2s |
10 msec |
|
Peak on-state voltage |
VFM |
|
1.16 |
|
V |
IFM = 4500 A; Tj = 25oC |
|
Threshold voltage |
VF0 |
|
0.75 |
|
V |
Tj = Tj Max |
|
Slope resistance |
rf |
|
0.055 |
|
mΩ |
Tj = Tj Max |
|
Reverse Recovery Charge (4) |
Qrr |
|
- |
|
μC |
|
|
Reverse Recovery Time (4) |
tRR |
|
- |
|
μs |
|
For guaranteed maximum values, contact factory
THERMAL AND MECHANICAL CHARACTERISTICS
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+180 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+180 |
|
oC |
|
|
Thermal resistance - junction to case |
RΘ (j-c) |
|
- - |
|
oC/kW |
Double side cooled Single sided cooled |
|
Thermal resistance - case to sink |
RΘ (c-s) |
|
6 - |
|
oC/kW |
Double side cooled Single sided cooled |
|
Thermal resistance - junction to sink |
RΘ (j-s) |
|
24 - |
|
oC/kW |
Double side cooled Single sided cooled |
|
Mounting force |
P |
22 |
24.5 |
|
kN |
|
|
Weight |
W |
|
|
- |
Kg |
about |
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS
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Main Product:
Semiconductor Triac ,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
