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Maximum Ratings (TC=25℃ unless otherwise specified)
|
Symbol |
Parameter |
Test conditions |
Value |
Unit |
Note |
|
VDSmax |
Drain-Source Voltage |
VGS = 0V, ID = 100μA |
1200 |
V |
|
|
VGSmax |
Gate-Source voltage |
AC (f > 1 Hz) |
-10/+25 |
V |
|
|
ID |
Continuous Drain current |
VGS = 15V, TC = 25°C VGS = 18V, TC = 25°C |
140 |
A |
Fig. 14 |
|
VGS = 15V, TC = 100°C VGS = 18V, TC = 100°C |
99 |
||||
|
ID,pulse |
Pulsed Drain Current |
Pulse with tp limited by Tjmax |
243 |
A |
|
|
PD |
Power Dissipation |
TC = 25°C, Tj = 175°C |
577 |
W |
Fig. 16 |
|
Tj |
Operating junction temperature |
|
-55~175 |
°C |
|
|
Tstg |
Storage temperature |
|
-55~175 |
°C |
|
|
|
TO-247 mounting torque |
M3 Screw |
0.7 |
Nm |
|
Thermal Characteristics
|
Symbol |
Parameter |
Value |
Unit |
Note |
||
|
Min. |
Typ. |
Max. |
||||
|
Rth(jc) |
Thermal resistance from Junction to Case |
|
0.26 |
|
K/W |
Fig. 15 |
|
Rth(ja) |
Thermal resistance from Junction to Ambient |
|
40 |
|
K/W |
|
Electrical Characteristics Tj=25°C unless otherwise specified
Static Characteristics
|
Symbol |
Parameter |
Test conditions |
Value |
Unit |
Note |
||
|
Min. |
Typ. |
Max. |
|||||
|
V(BR)DSS |
Drain-Source Breakdown voltage |
VGS = 0V, ID = 100μA |
1200 |
|
|
V |
|
|
VGS(th) |
Gate Threshold voltage |
VGS = VDS, ID = 25mA |
|
2.9 |
|
V |
Fig. 9 |
|
VGS = VDS, ID = 25mA, Tj= 175°C |
|
2.0 |
|
||||
|
IGSS |
Gate-Source Leakage current |
VGS = 15V, VDS = 0V |
|
|
250 |
nA |
|
|
IDSS |
Zero Gate Voltage Drain Current |
VDS = 1200V, VGS = 0V, Tj = 25°C |
|
1 |
50 |
μA |
|
|
RDS(on) |
Drain-Source On-state Resistance |
VGS = 15V, ID = 75A VGS = 18V, ID = 75A |
|
16 14 |
24 |
mΩ |
Fig. 3, 4, 5 |
|
VGS = 15V, ID = 75A, Tj = 175°C VGS = 18V, ID = 75A, Tj = 175°C |
|
26 25 |
|
||||
|
gfs |
Transconductance |
VDS = 15V, ID = 75A |
|
63 |
|
S |
Fig. 6 |
|
VDS = 15V, ID = 75A, Tj = 175°C |
|
58 |
|
||||
Package Dimensions
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor ,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
