AMPLEON RF LDM0S

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Shenzhen Tongxinke Electronic Technology Co., Ltd.

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Product details

2-Stage Doherty MMIC

Part Number：B11G3338N81D

Manufacturer：Ampleon

Device Type：Dual‑section 3‑stage fully integrated Doherty MMIC, using advanced LDMOS technology, optimized for 3.3–3.8GHz 5G macro/small cell driver amplifiers。

Key Specifications

Frequency Range：3300 MHz ~ 3800 MHz
Drain Supply Voltage (VDS)：28 V (Typ.)
Output Power：8 W (1‑carrier LTE 20MHz, PAR=7.6dB)
Power Gain：28 dB (Typ.)
Drain Efficiency：40 % (Typ.)
Package：PQFN‑12x7‑36‑1 (36‑lead, leadless SMT)
Input/Output Impedance：50 Ω / 25 Ω (integrated pre‑match)
Biasing：Independent carrier/peaking bias; integrated gate switch
Features：High linearity, wide instantaneous bandwidth, ESD protection, DPD‑compatible

Key Features

Fully integrated Doherty: includes input splitter, output combiner, carrier/peaking devices, and pre‑match—minimizes external components；
3‑stage + dual‑section design delivers high gain and linearity for 5G NR high‑PAR signals；
Independent bias control for efficiency/linearity optimization; integrated gate switch enables power‑saving modes；
PQFN package offers excellent thermal performance and small footprint, ideal for high‑density mMIMO and active antennas。

Typical Applications

5G macro base station AAU/RRU driver amplifier；
5G small cell/pico cell final/driver stage；
5G mMIMO active antenna units；
3.5GHz broadband communication transmitters。

Part Number Definition

B11：5G 3.3–5.0GHz LDMOS MMIC family
G：3.3–3.8GHz frequency band
3338：3300–3800MHz range
N：Doherty configuration
81D：8W power rating, 3‑stage, D‑version

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Shenzhen Tongxinke Electronic Technology Co., Ltd.

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3 month

Address: China

Main Product: High-Q capacitor, High-frequency tube, RF transistor, RF switch , IC, RF module

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