R80N65HTNF TO247-3

R80N65HTNF TO247-3

5 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

 9 year year

Product details

P/N: YZPST-R80N65HTNF

N-Channel Power MOSFET

Features

Advanced technology

Excellent conduction and switching loss

Excellent stability and uniformity

Fast and soft antiparallel diode

Applications

Induction converters

Uninterruptible power supplies

Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	320	A
VCE(sat), typ @ VGE=15 V	1.35	V
Qg	224	nC

Marking Information

Product Name	Package	Marking
R8 0N65HTNF	TO247	R80N65HTN

Package & Pin Information

Absolute Maximum Ratings at Tvj=25 。C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01	VGES	±30	V
Continuous collector current1) , TC=25 °C	IC	114	A
Continuous collector current1) , TC=100 °C	IC	80	A
Pulsed collector current2) , TC=25 °C	IC, pulse	320	A
Diode forward current1) , TC=25 °C	IF	114	A
Diode forward current1) , TC=100 °C	IF	80	A
Diode pulsed current2) , TC=25 °C	IF, pulse	320	A
Power dissipation3) , TC=25 °C	PD	395	W
Power dissipation3) , TC=100 °C	PD	198	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Package Information

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

9 year

Address: Yangzhou, China

Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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