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TO-92 Plastic-Encapsulate Transistors
YZPST-2N3904 TRANSISTOR (NPN)
the type designation MMBT3904
|
Part Number |
Package |
Packing Method |
Pack Quantity |
|
2N3904 |
T0-92 |
BuIk |
1000pcs/Bag |
|
2N3904-TA |
T0-92 |
Tape |
2000pcs/Box |
MAXIMUM RATINGS (Ta=25'℃ unless otherwise noted)
Symbo1
Parameter
Va1ue
Unit
VCB0
Collector-Base Voltage
60
V
VCE0
Collector-Emitter Voltage
40
V
VEB0
Emitter-Base Voltage
6
V
C
Collector Current -Continuous
0.2
A
PC
Collector Power Dissipation
0.625
W
TJ,Tstg
Operation Junction and Storage Temperature Range
-205
C
=25℃ unless otherwise specified
Parameter
Symbo1
Test
Min
Typ
Max
Unit
conditions
Co11ector﹒base
V(BR)CBO
IC=10ΚA, IE=0
60
V
breakdown
vo1tage
Co11ector﹒emitter
V(BR)CEO
IC= 1mA , IB=0
40
V
breakdown
vo1tage
Emitter﹒base
V(BR)EBO
IE= 10ΚA, IC=0
6
V
breakdown
vo1tage
Co11ector cut﹒off
ICBO
VCB=60V, IE=0
0.1
UA
current
Co11ector
ICEX
VCE=30V, VEB(off)=3V
0.05
UA
cut﹒off
current
Emitter
IEBO
VEB= 5V, IC=0
0.1
UA
cut﹒off
current
FE1
VCE=1V, IC=10mA
100
400
DC
current
FE2
VCE=1V, IC=50mA
60
gain
FE3
VCE=1V, IC=100mA
30
Co11ector﹒emitter
VCE(sat)
IC=50mA, IB=5mA
0.3
V
saturation
vo1tage
Base﹒emitter
VBE(sat)
IC=50mA, IB=5mA
0.95
V
saturation
vo1tage
Transition
T
VCE=20V,IC=10mA,f=100MHz
300
MHZ
frequency
De1ay
td
VCC=3V,VBE=0.5V,
35
ns
Time
IC=10mA,IB1=1mA
Rise
tr
35
ns
Time
Storage
ts
VCC=3V, IC=10mA
200
ns
Time
IB1=IB2=1mA
Fa11
tf
50
ns
Time
| Symbo1 | Dimensions | Dimensions | ||
| n | ln | |||
| Mi11imeters | lnches | |||
| Min | Max | Min | Max | |
| A | 3.3 | 3.7 | 0.13 | 0.146 |
| A1 | 1.1 | 1.4 | 0.043 | 0.055 |
| b | 0.38 | 0.55 | 0.015 | 0.022 |
| c | 0.36 | 0.51 | 0.014 | 0.02 |
| D | 4.3 | 4.7 | 0.169 | 0.185 |
| D1 | 3.43 | 0.135 | ||
| E | 4.3 | 4.7 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.44 | 2.64 | 0.096 | 0.104 |
| L | 14.1 | 14.5 | 0.555 | 0.571 |
| Κ | 1.6 | 0.063 | ||
| h | 0 | 0.38 | 0 | 0.015 |
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