SCR 25TTS12FP TO220F

3 year ago

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YANGZHOU POSITIONING TECH CO., LTD.

 7 year year

Product details

SCR P/N:YZPST-25TTS12FP

DESRCRIPTION:
Due to separation diffusion process and mesa
technology and Glass passivation, these devices
have good performance at dv/dt and reliability.
These series of SCR are specifically designed
for domestic lighting, heating and motor speed
controllers.

MAIN FEATURES

Symbol	Value	Unit
IT(RMS)	25	A
VDRM/VRRM	1200	V
IGT	10-20	mA

ABSOLUTE MAX I MUM RATINGS

Symbol	PARAMETER			Value	Unit
IT(RMS)	RMS on-state current(all conduction angles)	TO-220AB	Tc=90℃	25	A
ITSM	Non repetitive surge peak on-state current (half sine cycle, Tj=25℃)	F=50HZ tp=10ms		250	A
I2t	I2t Value for fusing	tp=10ms		312	A2 S
di/dt	Repetitive rate of rise of on-state Current after triggering	F=120HZ,Tj=125℃		100	A/μs
VDRM VRRM	Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage	Tj=25℃		1200	V
IGM	Peak gate current, tp=20us,	Tj=125℃		4	A
PG(AV)	Average gate power dissipation	Tj=125℃		1	W
Tstg	Storage junction temperature range	-40 to +150			℃
Tj	Operating junction temperature range	-40 to +125			℃

ELECTRICAL CHARACTERISTICS

Symbol	Test Condition	Quadrant	Value		Unit
IGT	VAK=12V, R=50Ω, T=25°C	Ⅰ	MAX	25	mA
VGT	VAK=12V, R=50Ω, T=25°C	Ⅰ	MAX	1.2	V
VGD	VD=VDRM RL=3.5KΩ Tj=125℃		MIN	0.2	V
IH	IT=100mA, IG=50mA		MAX	50	mA
IL	IG=1.2IGT	Ⅰ	MAX	80	mA
dv/dt	VD=67% VDRM gate open(Tj=125℃)		MIN	1000	V/μs

STATIC CHARACTERISTICS

Symbol	Parameter	Value		Unit
VTM	IT=50A, IG=50mA, T=25°C	MAX	1.50	V
IDRM/IRRM	VD=VDRM VR=VRRM, Tj=25℃	MAX	5	μA
H.T.IDRM/IRRM	VD=VDRM VR=VRRM, Tj=125℃	MAX	1	mA
Rth(j-c)	Junction to case(DC), TO-220A	MAX	0.9	℃/W

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

7 year

Address: Yangzhou, China

Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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