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30TPS12 Thyristors P/N:YZPST-30TPS12
High Voltage 30TPS12 30A SCR TO-247
The 30TPS12 High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.Typical applications are in input rectification (soft start) and these products are designed to be used with input diodes, switches and output rectifiers,which are available in identical package outlines.
Symbol
Symbol
Value
IGT
≤35 mA
IT(RMS)
30 A
VRRM
1200 V
ABSOLUTE MAX I MUM RATINGS (TC = 25°C, unless otherwise specified)
|
Symbol |
PARAMETER |
Value |
Unit |
|
V DRM |
Repetitive peak off-state voltage (Tj =25℃) |
1200 |
V |
|
VRRM |
Repetitive peak reverse voltage (Tj=25℃) |
1200 |
V |
|
IT(AV) |
Average on-state current (180° conduction angle) |
20 |
A |
|
IT(RMS) |
RMS on-state current(full sine wave) |
30 |
A |
|
ITSM |
Non repetitive surge peak on-state current (180° conduction angle, F=50Hz ，TC=85℃) |
300 |
A |
|
I2t |
I2t for Fusing (t = 10 ms) |
450 |
A2s |
|
dI /dt |
Critical rate of rise of on-state current (I =2 ×IGT, tr ≤ 100 ns) |
50 |
A/μs |
|
IGM |
Peak Gate Current |
4 |
A |
|
PG(AV) |
Average Gate Power dissipation |
1 |
W |
|
Tstg |
Storage junction temperature range |
-40 ~ 150 |
°C |
|
TJ |
Operating junction temperature range |
-40 ~ 125 |
°C |
PACKAGE MECHANICAL DATA
Symbol
Test Condition
Value
Unit
Min
Max
IGT
V = 12V R =33Ω
35
mA
VGT
1.3
V
VGD
VD=VDRM Tj=125℃
0.2
V
IL
IG= 1.2IGT
180
mA
IH
IT=500mA
120
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
500
V/μs
VTM
ITM =45A tp=380μs
1.7
V
IDRM
VD=VDRM VR=VRRM
20
μA
IRRM
4
mA
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode,
Silicon Transistor,
Bridge Rectifier
