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P/N:YZPST-BT151S SCRS
Hot selling BT151S-500R TO-252 SCR
Package
TO-252-2L
Main Feature （Tj= 25℃）
|
Symbol |
Value |
Unit |
|
IT(AV) |
7.5 |
A |
|
VDRM / VRRM |
≥ 600 |
V |
|
IGT |
3to 6 |
mA |
|
Symbol |
Parameter |
Value |
Unit |
|
IT (RMS) |
RMS on-state current (180 °conduction angle) |
12 |
A |
|
IT(AV) |
AV on-state current (180 °conduction angle) |
7.5 |
A |
|
ITSM |
Non repetitive surge peak on-state Current (tp= 10ms) |
100 |
A |
|
I2t |
(tp= 10ms) |
50 |
A2S |
|
IGM |
Peak gate current(tp=20us) |
2 |
A |
|
PGM |
Peak gate power |
5 |
W |
|
PG(AV) |
Average gate power |
0.5 |
W |
|
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+125 |
℃ |
|
Symbol |
Parameter |
Value |
Unit |
|
Rth (j-mb) |
Junction to case |
2.0 |
K/W |
|
Rth (j-a) |
Junction to ambient |
75 |
K/W |
Symbol
Test Conditions
Value
Unit
Min
Type
Max
IGT
VD=6V, RL= 100Ω
3
5
6
uA
VGT
VD= 12V, RL= 100Ω
-----
0.7
0.8
V
VGD
VD=VDRM, RL=3.3KΩ Tj=110℃
0.2
-----
-----
V
IH
IT= 100mA Gate Open
-----
10
mA
IL
IG= 1.2IGT
20
mA
dV/dt
VD=67%VDRM, GateOpen, Tj=125℃
50
125
v/μs
-----
VTM
IT= 16A,tp=380μs
-----
-----
1.6
V
IDRM
VD=VDRM
10
μA
500
μA
VR=VRRM
Tj=25℃
-----
-----
10
μA
IRRM
Tj=125℃
-----
-----
500
μA
Measure of package
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Main Product:
Semiconductor Triac,
Semiconductor Thyristor,
Semiconductor Module,
Power Diode ,
Silicon Transistor,
Bridge Rectifier
