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GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is requiredin all four quadrants.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ℃)
Parameter
Symbol
Typ
Unit
Repetitive peak
VDRM
600
V
off-state voltages
VRRM
RMS on-state current
IT(RMS)
12
A
Non-repetitive peak on-state current
ITSM
100
A
Max.Operating
Tj
85
℃
Junction temperature
Storage Temperature
Tstg
110
℃
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ )
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | |
| Repetitive peak off-state voltages | VDRM | 600 | V | ||||
| VRRM | |||||||
| RMS on-state current | IT(RMS) | Full sine wave, Tmb≤107℃ | 12 | A | |||
| On-state voltage | VT | IT=17A | — | 1.3 | 1.55 | V | |
| Holding current | IH | VD = 12 V; IGT = 0.1 A | 50 | mA | |||
| Gate trigger current | T2+G+ | 12 | 50 | ||||
| T2+G- | IGT | VD=12V, IT=0.1A | — | 14 | 50 | mA | |
| T2-G- | — | 25 | 50 | ||||
| Latching | T2+G+ | 70 | |||||
| current | T2+G- | IL | VD = 12 V; IGT = 0.1 A | — | — | 80 | mA |
| T2-G- | 70 | ||||||
| Gate trigger voltage | VGT | VD = 12 V; IT = 0.1 A | 1.6 | V | |||
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Main Product:
Semiconductor Triac,
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Bridge Rectifier
