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Bridge Rectifier SKD82-18

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Product details

YZPST-SKD82-18 Bridge Rectifier

Parameter Symbol Conditions Values Units
Repetitive Peak Off-State Voltage VDRM - V
Non Repetitive Peak Off-State Voltage VDSM -
Repetitive Peak Reverse Voltage VRRM 1800 V
Non Repetitive Peak Reverse Voltage VRSM 1900 V
Average Rectified Output Current IO(AV) TC=85°C 80 A
Surge Forward Current IFSM 50Hz; Half Sine Wave,1Pulse, Non-Repetitive 750 A
I Squared t I2t 2msec to 10msec 2.8 KA2s
Surge On-State Current ITSM 50Hz; Half Sine Wave,1Pulse, Non-Repetitive A
-
I Squared t I2t 2msec to 10msec - KA2s
Peak Forward Voltage VFM Tj=25°C; IF=150A 1.6 V
Peak On-State Voltage VTM -
Peak Reverse Current IRM VRM= VRRM, Tj= 150°C 6 mA
Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125°C IG=200mA, diG/dt=0.2A/μs A/μs
-
Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125°C - V/μs
Gate Current to Trigger IGT VD=6V,IT=1A,Tj=25°C - mA
Gate Voltage to Trigger VGT - V
Holding Current IH - mA
Thermal Resistance Rth(j-c) Junction to Case 1.1 K /W
Rth(c-f) Case to Fin 0.07 K /W
Tvj -40~+150 °C
Tstg -40~+125 °C
Visol a.c. 50Hz; r.m.s.; 1min. 3600 V
Mounting torque M Case mounting 5 N.m
Terminals

OUTLINE DRAWING (Dimensions in mm)

Yzpst Skd82 18 Outline Jpg


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Address: Yangzhou, China


Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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