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YZPST-RD3016-TO263

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Product details

 

 

YZPST-ZP3016-RD3016-ZP30A1600V     30A Rectifier  Diode

 

FEATURES
l Glass passivated chip junction
l High surge current capability
l High voltage and Durability
l
APPLICATIONS
l DCPower Supplies
l Field Supply for DCmotors
l Power Rectifiers
_20250514111440

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Test Conditions

Value

Unit

Storage junction temperature range

Tstg

 

-55 ~ 150

Operating junction temperature range

Tj

 

-55~ 150

Maximum Repetitive peak reverse voltage

VRRM

 

1600

V

Maximum average forward current

IF(AV)

TC = 105 °C, 180°       conduction half sine wave

30

A

Maximum peak one cycle

non-repetitive surge current

 

IFSM

10 ms sine pulse, no voltage reapplied

 

350

 

A

I2t value for fusing (tp=10ms)

I2t

10 ms sine pulse, no voltage reapplied

612

A2S

ELECTRICAL CHARACTERISTICS (T=25unless otherwise specified)

Parameter Symbol Test Conditions Value Unit
Maximum forward voltage drop VFM IF=30 A 1.2 V
Maximum reverse leakage current IRM T= 25 °C 5 µA
VR = Rated VRRM
T= 150 °C 1 mA
VR = Rated VRRM

Thermal Resistances

Symbol Parameter Value Unit
Rth(j-a) junction to    ambient 45 /W
Rth(j-c) Junction to case 0.9

Ordering Information Scheme

High Voltage 30A Rectifier Diode

TO-263 Package Mechanical Data

High Voltage Rectifier

_20250514111907

 

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8 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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