MDMA660U1600PTEH

MDMA660U1600PTEH

2 month ago

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YANGZHOU POSITIONING TECH CO., LTD.

 8 year year

Product details

P/N:YZPST-MDMA660U1600PTEH

Standard Rectifier Module

3~ Rectifier Bridge + NTC

Features / Advantages:

Package with DCB ceramic

Improved temperature and power cycling

Planar passivated chips

Very low forward voltage drop

Very low leakage current

Applications:

Diode for main rectification

For three phase bridge configurations

Supplies for DC power equipment

Input rectifiers for PWM inverter

Battery DC power supplies

Field supply for DC motors

Package: E3-Pack

Isolation Voltage: 4300 V~

Industry standard outline

RoHS compliant

PressFit-Pins for PCB mounting

Height: 17 mm

Base plate: Copper internally DCB isolated

Advanced power cycling

Phase Change Material available

Symbol	Definition Conditions				min.	typ.	max.	Unit
VRSM	max. non-repetitive reverse blocking voltage			TVJ = 25°C			1700	V
VRRM	max. repetitive reverse blocking voltage			TVJ = 25°C			1600	V
IR	reverse current VR = 1600 V VR = 1600 V			TVJ = 25°C TVJ = 150°C			200 3	µA mA
VF	forward voltage drop IF = 220 A IF = 660 A IF = 220 A IF = 660 A			TVJ = 25°C			1.28 1.95	V V
VF				TVJ = 125°C			1.19 1.95	V V
I DAV	bridge output current		TC = 85°C rectangular d = ⅓	TVJ = 150°C			660	A
VF0 rF	threshold voltage slope resistance	} for power loss calculation only		TVJ = 150°C			0.77 1.8	V mΩ
RthJC	thermal resistance junction to case						0.15	K/W
RthCH	thermal resistance case to heatsink					0.075		K/W
Ptot	total power dissipation			TC = 25°C			830	W
IFSM	max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine			TVJ = 45°C VR = 0 V			5.00 5.40	kA kA
IFSM				TVJ = 150°C VR = 0 V			4.25 4.59	kA kA
I²t	value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine			TVJ = 45°C VR = 0 V			125.0 121.3	kA²s kA²s
I²t				TVJ = 150°C VR = 0 V			90.3 87.6	kA²s kA²s
CJ	junction capacitance VR = 400 V; f = 1 MHz			TVJ = 25°C		208		pF

	Definition Conditions			min.	typ.	max.	Unit
I RMS	RMS current per terminal					30	A
TVJ	virtual junction temperature			-40		175	°C
Top	operation temperature			-40		150	°C
Tstg	storage temperature			-40		125	°C
Weight					270		g
MD	mounting torque			3		6	Nm
dSpp/App	terminal to terminal creepage distance on surface \| striking distance through air			6.0			mm
dSpb/Apb	terminal to backside			12.0			mm
V ISOL	isolation voltage	t = 1 t = 1	second 50/60 Hz, RMS; IISOL ≤ 1 mA minute	4300 3600			V V

Ordering	Ordering Number	Marking on Product	Delivery Mode	Quantity	Code No.
Standard	MDMA660U1600PTEH	MDMA660U1600PTEH	Blister	24	515654
Alternative	MDMA660U1600PTEH-PC	MDMA660U1600PTEH	Blister	24	514475

Outlines E3-Pack

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YANGZHOU POSITIONING TECH CO., LTD.

 Audited supplier

8 year

Address: Yangzhou, China

Main Product: Semiconductor Triac , Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor, Bridge Rectifier

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