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650V 40A IGBT Transistor DXG40N65HSEK

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Product details
Semiconductor Discrete Devices -- IGBT Single Tube
650V 40A  IGBT DXG40N65HSEK
 
Features
650V 40A,VCE(sat)(typ.) = 1.70 V@40A
Field Stop IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
 
Benefits
Enhanced Motor Control Efficiency
   Rugged Performance.
Superior Current Sharing
 
IGBT TO-247 Package
 
*A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device, belongs to the category of electronic components. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-220) with three terminals (Gate, Collector, Emitter). Its core function is to act as a high-voltage, high-current, high-speed electronic switch, controlled by the gate voltage.
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Address: Dongguan, China


Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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