DXG60N65HSEU 650V 60A IGBT Single Tube

DXG60N65HSEU 650V 60A IGBT Single Tube

4 week ago

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Guangdong Kinwill Electronic Co., Ltd

 2 month year

Product details

Semiconductor Discrete Devices -- IGBT Single Tube

Features

 650V/60A with typical saturation voltage (VCE(sat)) of 2.3V at 60A

 Built on Field Stop IGBT architecture for enhanced performance

 Capable of withstanding short-circuit conditions for up to 10μs

 Square Reverse Bias Safe Operating Area (RBSOA) ensures reliability

 Positive temperature coefficient on VCE(on) for improved thermal

Benefits

 High Efficiency for Welding, Inductive heating, UPS and other high-frequency application

 Rugged Performance

 Excellent Current Sharing in Parallel Operation

*A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device, belongs to the category of electronic components. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-220) with three terminals (Gate, Collector, Emitter). Its core function is to act as a high-voltage, high-current, high-speed electronic switch, controlled by the gate voltage.

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Guangdong Kinwill Electronic Co., Ltd

 Audited supplier

2 month

Address: Dongguan, China

Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables, IGBT Module , Power MOSFET

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