DXG60N65HSE 650V IGBT Transistors

DXG60N65HSE 650V IGBT Transistors

4 week ago

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Guangdong Kinwill Electronic Co., Ltd

 2 month year

Product details

Semiconductor Discrete Devices -- IGBT Transistors

Features

 Rated for 650V/60A with a typical on-state voltage drop of 2.3V at 60A load current.

 Incorporates Field Stop IGBT design for superior performance.

 Provides 10-microsecond short-circuit withstand capability.

 Features a well-defined Reverse Bias Safe Operating Area.

 Positive VCE (on) Temperature Coefficient.

Benefits

 High Efficiency for Welding, Inductive heating, UPS and other high-frequency application

 Rugged Performance

 Excellent Current Sharing in Parallel Operation

*IGBT Single Tube (or Discrete IGBT)
A power semiconductor device that packages a single IGBT chip (often with a freewheeling diode) in an isolated housing.

Key characteristics:

Contains only one IGBT unit without internal drivers;

Requires external gate drivers, heat sinks, and protection circuits;

Standardized packages (e.g., TO-247, TO-220) for design flexibility.

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Guangdong Kinwill Electronic Co., Ltd

 Audited supplier

2 month

Address: Dongguan, China

Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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