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High Voltage IGBT DXG25N120H 1200V 25A

4 week ago
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Product details
Semiconductor Discrete Devices -- IGBT Single Tube
 
Features
1200V, 25A ,VCE(sat)(typ.)=2.3 V@VGE=15V
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA
 
General Description
Offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications.
 
DXG25N120H.1
 
*A Discrete IGBT (Insulated Gate Bipolar Transistor Single Tube) is a separately packaged semiconductor power switching device. It integrates an IGBT structure (typically with an anti-parallel freewheeling diode) on a single chip, housed in a standard discrete package (e.g., TO-247, TO-220) with three terminals (Gate, Collector, Emitter). Its core function is to act as a high-voltage, high-current, high-speed electronic switch, controlled by the gate voltage.
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Audited supplier
2 month
Address: Dongguan, China


Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables , IGBT Module, Power MOSFET

Disclaimer:
The information of 2bvideo.com limited shown above is provided by the user or collected on the network. Video 2B does not guarantee the authenticity,accuracy and legitimacy of 2bvideo.com limited information. Video 2B does not involve legal relationships and disputes between users arising from transactions other than secured transactions on this website. Disputes shall be settled by you through negotiation. If you are the person in charge or relevant employee of this enterprise, if you find that the enterprise information is incorrect or want to manage thiscompany, please contact us jacklee1558@gmail.com, after you claim the enterprise, you can obtain management permission, publish supplyand demand information, bring consulting orders, and remove page advertisements.
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