300V N Channel MOSFET PTW69N30B

300V N Channel MOSFET PTW69N30B

4 week ago

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Guangdong Kinwill Electronic Co., Ltd

 2 month year

Product details

300V N-Channel MOSFET

Power MOSFET For SMPS -- PTW69N30B

General Features

 Advanced Planar Process

 RDS(ON),typ.=40 mΩ@VGS=10V

 Low Gate Charge Minimize Switching Loss

 Rugged Poly silicon Gate Structure

Applications

 BLDC Motor Driver

 Electric Welder

 High Efficiency SMPS

Absolute Maximum Ratings

Symbol	Parameter	PTW69N30B	Unit
VDSS	Drain-to-Source Voltage	300	V
VGSS	Gate-to-Source Voltage	±30	V
ID	Continuous Drain Current	69	A
ID	Continuous Drain Current @ Tc= 100℃	42
IDM	Pulsed Drain Current at VGS= 10V[2,4]	276
EAS	Single Pulse Avalanche Energy	4494	mJ
dv/dt	Peak Diode Recovery dv/dt[3]	5.0	V/ns
PD	Power Dissipation	520	W
TL TPAK	Maximum Temperature for Soldering Leads at 0.063in ( 1.6mm) from Case for 10 seconds, Package Body for 10 seconds	300 260	℃
TJ& TSTG	Operating and Storage Temperature Range	-55 to 150	℃

* The MOSFET, a Metal-Oxide-Semiconductor Field-Effect Transistor, is classified as a voltage-controlled semiconductor device within the broader category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal. MOSFETs are extensively used in modern electronics.

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Guangdong Kinwill Electronic Co., Ltd

 Audited supplier

2 month

Address: Dongguan, China

Main Product: Semiconductor Device , Electronic Components, Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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