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1500V N-ch High Planar MOSFET PTH03N150

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Product details
1500V N-ch High Planar MOSFET
Power MOSFET -- PTH03N150
 
General Features
RoHS Compliant
RDS(ON),typ.=5.4 Ω@VGS=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
 
Applications
Adaptor
Charger
SMPS Standby Power
 
 
PTH03N150(2)PTH03N150

Absolute Maximum Ratings

Symbol

Parameter

PTH03N150

PTA03N150

Unit

VDSS

Drain-to-Source Voltage

1500

 

V

VGSS

Gate-to-Source Voltage

±30

ID

Continuous Drain Current

3

 

A

IDM

Pulsed Drain Current at VGS= 10V

12

EAS

Single Pulse Avalanche Energy,L=30mH

500

mJ

 

PD

Power Dissipation

90

35

W

Derating Factor above 25

0.72

0.28

W/

TL

Soldering Temperature

Distance of 1.6mm from case for 10 seconds

300

 

TJ& TSTG

Operating and Storage Temperature Range

-55 to 150

 
The MOSFET, a Metal-Oxide-Semiconductor Field-Effect Transistor, is classified as a voltage-controlled semiconductor device within the broader category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal.
 
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Audited supplier
2 month
Address: Dongguan, China


Main Product: Semiconductor Device, Electronic Components, Power Inverter , Wires and Cables, IGBT Module, Power MOSFET

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