1200V N-Channel MOSFET PTF12N120

4 week ago

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Guangdong Kinwill Electronic Co., Ltd

 2 month year

Product details

1200V N-Channel MOSFET

Power MOSFET -- PTF12N120

Key Features

Fast Switching Capability
Typical RDS(ON) = 1.2Ω @ VGS=10V
Low Gate Charge for Reduced Switching Losses
Body Diode with Fast Recovery Characteristics

Typical Applications

AC Adapters
Battery Chargers
- Standby Power Supplies in SMPS (Switched-Mode Power Supplies)

Absolute Maximum Ratings

Symbol	Parameter	Maximum Rating	Unit
VDSS	Drain-to-Source Voltage	1200	V
VGSS	Gate-to-Source Voltage	±30	V
ID	Continuous Drain Current	12	A
ID	Continuous Drain Current @ Tc=100℃	7
IDM	Pulsed Drain Current at VGS=10V[2,4]	48
EAS	Single Pulse Avalanche Energy	700	mJ
dv/dt	Peak Diode Recovery dv/dt[3]	5.0	V/ns
PD	Power Dissipation	380	W
PD	Derating Factor above 25℃	3.04	W/℃
TL TPAK	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds	300 260	℃
TJ& TSTG	Operating and StorageTemperatureRange	-55 to 150	℃

*The MOSFET, a Metal-Oxide-Semiconductor Field-Effect Transistor, is classified as a voltage-controlled semiconductor device within the broader category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal.

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Guangdong Kinwill Electronic Co., Ltd

 Audited supplier

2 month

Address: Dongguan, China

Main Product: Semiconductor Device, Electronic Components , Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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