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| Absolute Maximum Ratings | |||
|
Parameter |
Symbol |
Value |
Unit |
|
Drain-Source Voltage |
VDSS |
500 |
V |
|
Continuous drain current ( TC = 25°C ) ( TC = 100°C ) |
ID |
22 14 |
A A |
|
Pulsed drain current 1) |
IDM |
88 |
A |
|
Gate-Source voltage |
VGSS |
±30 |
V |
|
Avalanche energy, single pulse 2) |
EAS |
1201 |
mJ |
|
Power Dissipation ( TC = 25°C ) |
PD |
321 |
W |
|
Operating junction and storage temperature range |
TJ, TSTG |
-55 to +150 |
°C |
|
Continuous diode forward current |
IS |
22 |
A |
|
Diode pulse current |
IS,pulse |
88 |
A |
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Main Product:
Semiconductor Device,
Electronic Components,
Power Inverter,
Wires and Cables,
IGBT Module,
Power MOSFET
