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N-channel 650V 7A Power MOSFET LND7N65D

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Product details
Semiconductor Discrete Devices
650V 7A N-Channel MOSFET - LND7N65D
 
Product Summary
VDSS :             650V
ID  :                      7A
RDS(on),max  : 1.4Ω
Qg,typ  :        23.5nC
 
Description
The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance, superior switching performance and high avalanche energy.
 
Features
Low RDS(on)
Low gate charge (typ. Qg =23.5nC)
100% UIS tested
RoHS compliant
 
Applications
Power factor correction.
Switched mode power supplies.
LED driver.
Uninterruptible power supply(UPS )
 
 
 
 Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

650

V

Continuous drain current 1)

( TC = 25°C ) ( TC = 100°C )

ID

7

4.4

A

A

Pulsed drain current 2)

IDM

28

A

Gate-Source voltage

VGSS

±30

V

Avalanche energy, single pulse 3)

EAS

361

mJ

Power Dissipation

PD

40

W

Operating and Storage Temperature Range

TJ , TSTG

-55 to +150

°C

Continuous diode forward current

IS

7

A

Diode pulse current

IS,pulse

28

A

 
Notes:
1. Drain current limited by maximum junction temperature, TO-220 equivalent.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. IAS=8.5A, L=10mH, VDD=60V, Starting Tj= 25°C.
 
 
*A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor device and belongs to the category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal. Its core structure consists of a metal gate, an insulating oxide layer (typically SiO₂), and a semiconductor channel. Key features include high input impedance, low drive power, and fast switching speeds.
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Audited supplier
2 month
Address: Dongguan, China


Main Product: Semiconductor Device, Electronic Components, Power Inverter, Wires and Cables, IGBT Module, Power MOSFET

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