
Maximum Ratings
Symbol |
Item |
Ratings |
Unit |
TG40E60 |
|||
VDRM |
Repetitive Peak Off-State Voltage |
600 |
V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT(RMS) |
R.M.S. On-State Current |
Tc =64℃ |
40 |
A |
ITSM |
Surge On-State Current |
One cycle, 50/60Hz, peak value, non-repetitive |
380/420 |
A |
I2t |
I2t |
Value for one cycle of surge current |
730 |
A2s |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PG(AV) |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG =100mA,VD = ½VDRM,diG/dt =1A/ μs |
50 |
A/ μs |
Tj |
Operating Junction Temperature |
|
-40~+125 |
℃ |
Tstg |
Storage Temperature |
|
-40~+150 |
℃ |
VISO |
Isolation Breakdown Voltage(R.M.S.) |
A.C.1 minute |
2500 |
V |
|
Mounting Torque(M4) |
Recommended Value 1.0~1.4N ・m(10~14kgf・㎝) |
1.5(15) |
N・m (kgf・㎝) |
|
Mass |
Typical value |
23 |
g |
Electrical Characteristics
Symbol |
Item |
Conditions |
Ratings |
Unit |
|||
Min. |
Typ. |
Max. |
|||||
IDRM |
Repetitive Peak Off-State Current |
Tj =125℃, VD =VDRM |
|
|
5 |
mA |
|
VTM |
Peak On-State Voltage |
IT =60A |
|
|
1.4 |
V |
|
I GT1 |
1 |
Gate Trigger Current |
VD =6V, IT =1A |
|
|
50 |
mA |
I GT1 |
2 |
|
|
50 |
mA |
||
I GT3 |
3 |
― |
― |
― |
mA |
||
I GT3 |
4 |
|
|
50 |
mA |
||
VGT1 |
1 |
Gate Trigger Voltage |
VD =6V, IT =1A |
|
|
1.5 |
V |
VGT1 |
2 |
|
|
1.5 |
V |
||
VGT3 |
3 |
― |
― |
― |
V |
||
VGT3 |
4 |
|
|
1.5 |
V |
||
VGD |
Non-Trigger Gate Voltage |
Tj =125℃, VD = ½VDRM |
0.2 |
|
|
V |
|
dv/dt |
Critical Rate of Rise of Off-State Voltage |
Tj =125℃, VD =⅔VDRM, Exponential wave. |
500 |
|
|
V/ μs |
|
〔dv/dt〕c |
Critical Rate of Rise of Off-State Voltage at commutation |
Tj =125℃, VD =⅔VDRM,〔di/dt〕c =10A/ms |
6 |
|
|
V/ μs |
|
IH |
Holding Current |
|
|
30 |
|
mA |
|
Rth(j-c) |
Thermal Impedance |
Junction to case |
|
|
1.3 |
℃/W |
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