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YZPST-TG40E60

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Product details
TRIAC (ISOLATED MOLD TYPE)
P/N:YZPST-TG40E60
TG40E is isolated mold triac suitable for wide range of
applications like copier, micro wave ovens, solid state switches, motor control, light control and heater control.
. IT(AV) 40A
. High surge capability 420A . Isolated Nounting(AC2500V)
. Tab Terminals
YZPST-TG40E60-1
Trigger mode of the triac

Maximum Ratings

 

Symbol

Item

Ratings

Unit

TG40E60

VDRM

Repetitive Peak Off-State Voltage

600

V

 
 

Symbol

Item

Conditions

Ratings

Unit

IT(RMS)

R.M.S. On-State Current

Tc =64℃

40

A

ITSM

Surge On-State Current

One cycle, 50/60Hz, peak value, non-repetitive

380/420

A

I2t

I2t

Value for one cycle of surge current

730

A2s

PGM

Peak Gate Power Dissipation

 

10

W

PG(AV)

Average Gate Power Dissipation

 

1

W

IGM

Peak Gate Current

 

3

A

VGM

Peak Gate Voltage

 

10

V

di/dt

Critical Rate of Rise of On-State Current

IG =100mA,VD = ½VDRM,diG/dt =1A/ μs

50

A/ μs

Tj

Operating Junction Temperature

 

-40~+125

℃

Tstg

Storage Temperature

 

-40~+150

℃

VISO

Isolation Breakdown Voltage(R.M.S.)

A.C.1 minute

2500

V

 

Mounting Torque(M4)

Recommended Value 1.0~1.4N ・m(10~14kgf・㎝)

1.5(15)

N・m

(kgf・㎝)

 

Mass

Typical value

23

g

 

Electrical Characteristics        

 

Symbol

Item

Conditions

Ratings

Unit

Min.

Typ.

Max.

IDRM

Repetitive Peak Off-State Current

Tj =125℃, VD =VDRM

 

 

5

mA

VTM

Peak On-State Voltage

IT =60A

 

 

1.4

V

I G(+)T1

1

 

Gate Trigger Current

 

VD =6V, IT =1A

 

 

50

mA

I G(-)T1

2

 

 

50

mA

I G(+)T3

3

―

―

―

mA

I G(-)T3

4

 

 

50

mA

VG(+)T1

1

 

Gate Trigger Voltage

 

VD =6V, IT =1A

 

 

1.5

V

VG(-)T1

2

 

 

1.5

V

VG(+)T3

3

―

―

―

V

VG(-)T3

4

 

 

1.5

V

VGD

Non-Trigger Gate Voltage

Tj =125℃, VD = ½VDRM

0.2

 

 

V

dv/dt

Critical Rate of Rise of Off-State Voltage

Tj =125℃, VD =⅔VDRM, Exponential wave.

500

 

 

V/ μs

〔dv/dt〕c

Critical Rate of Rise of Off-State Voltage at commutation

Tj =125℃, VD =⅔VDRM,〔di/dt〕c =10A/ms

6

 

 

V/ μs

IH

Holding Current

 

 

30

 

mA

Rth(j-c)

Thermal Impedance

Junction to case

 

 

1.3

℃/W

 
 
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9 year
Address: Yangzhou, China


Main Product: Semiconductor Triac, Semiconductor Thyristor, Semiconductor Module, Power Diode, Silicon Transistor , Bridge Rectifier

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