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Puwei Ceramic's Si₃N₄ AMB Copper-clad Substrate represents the cutting-edge solution for next-generation silicon carbide power modules. Engineered specifically for the demanding requirements of high-power electronics, this advanced substrate combines the exceptional mechanical properties of silicon nitride ceramic with the superior thermal and electrical performance of Active Metal Brazing (AMB) technology.
The silicon nitride ceramics selected for our Si₃N₄-AMB substrate feature a coefficient of thermal expansion that precisely matches SiC requirements, making them ideal for high-pressure, high-temperature, and high-frequency application environments. This compatibility makes our substrates perfectly suited for various SiC power module structures including HPD (High Power Density), DCM (Dual-Channel Memory), and T-PAK configurations in advanced Electronic Packaging.
High-performance Si₃N₄ AMB substrate optimized for SiC power applications
Comprehensive technical performance comparison showing silicon nitride advantages
The thermal expansion coefficient of our silicon nitride ceramics (3.2 ppm/°C) closely matches that of SiC semiconductors (3.7 ppm/°C), minimizing thermal stress at critical interfaces. This compatibility extends product lifetime and enhances reliability in high-power Integrated Circuits and advanced Microelectronics Packaging applications.
Our Si₃N₄-AMB substrate clearly outperforms traditional aluminum oxide DBC substrates in thermal shock resistance and toughness strength. The unique microstructure of silicon nitride prevents crack propagation under rapid temperature changes, making it ideal for harsh thermal environments in Power Devices and automotive applications.
The AMB substrate manufacturing process represents a significant improvement over traditional DBC methods. Compared to conventional DBC substrates, our AMB substrates offer substantial advantages in current carrying capacity, bonding strength, and long-term reliability for demanding High-Power Microelectronic Components.
With flexural strength exceeding 800 MPa, our silicon nitride substrates provide 3-5x greater mechanical robustness compared to alumina substrates. This superior strength withstands mechanical stress, vibration, and thermal cycling in the most demanding applications, ensuring reliable performance in challenging operating conditions.
As electric vehicles become the largest terminal market for AMB ceramic substrates, the industry is rapidly adopting the "SiC + AMB" technological route. To address range anxiety in new energy vehicles, the penetration rate of 800V high-voltage architecture is increasing, making our Si₃N₄-AMB substrate the preferred packaging solution for automotive electric drive, rail transit inversion, wind-solar-storage, and hydrogen energy applications.
As the largest terminal market for AMB ceramic substrates, electric vehicles benefit from our Si₃N₄ substrates in traction inverters, onboard chargers, and DC-DC converters. The 800V high-voltage architecture in new energy vehicles particularly benefits from the "SiC + AMB" technological route for enhanced performance and reliability. These are essential for automotive electronic ceramic substrates).
Power conversion and control systems in high-speed trains and rail infrastructure where reliability under vibration, mechanical stress, and temperature extremes is paramount for safety and operational efficiency.
Wind-solar-storage integration systems and hydrogen energy applications requiring robust thermal management, excellent thermal shock resistance, and long-term reliability in outdoor environments with wide temperature variations. Ideal for power semiconductor ceramic substrates).
High-power motor drives, industrial automation equipment, and power conversion systems demanding exceptional mechanical strength, thermal cycling performance, and reliability in harsh industrial environments. Used extensively in IGBT ceramic substrates).
Next-generation SiC power modules including HPD, DCM, and T-PAK configurations where thermal management, CTE matching, and mechanical robustness are critical for performance and longevity in High-Frequency Modules and Microwave Applications.
Used in laser diode ceramic heat sinks) and high-power LED modules where superior thermal dissipation extends device lifetime and ensures consistent optical performance.
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Main Product:
Alumina Ceramic Substrates,
Aluminum Nitride Substrates,
Metallized Ceramics,
AlN Ceramics Disc,
DPC Substrate,
DBC Ceramic Substrate
