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Puwei's AlN Ceramic Mo-Mn Metalized Substrate represents the pinnacle of reliability in high-performance electronics packaging. Engineered by fusing high-purity Aluminum Nitride (Thermal Conductivity: 170-200 W/m·K) with a robust Molybdenum-Manganese (Mo-Mn) metallization layer, this substrate delivers unmatched thermal management, superior electrical insulation, and exceptional mechanical stability. It is the cornerstone for next-generation high-power microelectronic components, RF circuits, and demanding microelectronics packaging applications where failure is not an option.
Precision-engineered AlN substrate with Mo-Mn metallization, ready for high-reliability assembly.
The foundation is high-purity Aluminum Nitride. Key properties include a thermal conductivity range of 170 to 200 W/(m·K), a coefficient of thermal expansion of 4.5 × 10⁻⁶/°C, and a dielectric constant between 8.5 and 9.0 at 1 MHz. It boasts exceptional electrical insulation with volume resistivity exceeding 10¹⁴ Ω·cm and a breakdown voltage greater than 15 kV/mm. The material also offers robust mechanical strength with flexural strength over 300 MPa.
The metallization is a fired Molybdenum-Manganese alloy with a typical post-firing thickness of 10 to 25 micrometers. It delivers excellent adhesion strength, tested to be greater than 70 MPa in standard pull tests. The surface exhibits outstanding solderability for direct brazing or soldering and can be further plated with Nickel (Ni) or Gold (Au) for enhanced wire bonding. The layer supports an extreme operating temperature range from -55°C to +850°C.
Mo-Mn is a thick-film, high-temperature firing process that forms a durable, chemically bonded, and hermetic interface with the AlN ceramic. This makes it fundamentally more robust than thin-film techniques for applications involving severe thermal stress, hermetic sealing, or high-temperature brazing. It is the preferred choice for creating reliable thick film hybrid microcircuits and hermetic microelectronics packaging.
The primary substrate for Insulated Gate Bipolar Transistor (IGBT) and next-generation Silicon Carbide (SiC) / Gallium Nitride (GaN) power devices. Its superior heat spreading is critical for electric vehicle inverters and industrial motor drives.
Essential for microwave components such as RF power amplifiers, filters, and antenna modules in 5G/6G infrastructure and radar systems, where thermal management and signal integrity are paramount.
Used in hermetic packages for sensor packaging and mission-critical avionics, providing a reliable seal-ring surface for welding metal lids to protect sensitive chips.
Serves as the base platform for hybrid micro circuits and Multi-Chip Modules (MCM), where the metallized surface allows for the printing of resistor and conductor pastes to build complex, high-reliability circuits.
Puwei Ceramic operates under an ISO 9001:2015 certified quality management system. Our materials are fully compliant with RoHS and REACH directives, and we maintain full batch traceability. We support application-specific reliability testing, including thermal shock and cycling, to qualify our substrates for your most demanding systems, ensuring they meet the standards required for global electronic packaging markets.
We partner with you to deliver tailored solutions. Our extensive customization capabilities include:
Our vertically controlled process guarantees consistency: from raw material QC of AlN powder, through precision sintering and machining, to meticulous screen-printing and high-temperature firing of the Mo-Mn paste. Every substrate undergoes 100% final inspection, including dimensional checks, adhesion pull tests, and electrical verification, ensuring you receive a bare ceramic plate of the highest reliability for your electronic integrated circuit assembly.
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