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Absolute Maximum Ratings
|
Symbol |
Parameter |
PTW50N30 |
Unit |
|
VDSS |
Drain-to-Source Voltage[ 1] |
300 |
V |
|
VGSS |
Gate-to-Source Voltage |
±20 |
|
|
ID |
Continuous Drain Current |
50 |
A |
|
ID @ Tc =100℃ |
Continuous Drain Current @ Tc= 100℃ |
31 |
|
|
IDM |
Pulsed Drain Current at VGS= 10V[2] |
200 |
|
|
EAS |
Single Pulse Avalanche Energy |
3044 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt[3] |
5.0 |
V/ns |
|
PD |
Power Dissipation |
305 |
W |
|
Derating Factor above 25℃ |
2.50 |
W/℃ |
|
|
TL TPAK |
Maximum Temperature for Soldering Leads at 0.063in ( 1.6mm) from Case for 10 seconds, Package Body for 10 seconds |
300 260 |
℃ |
|
TJ& TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
* The MOSFET, a Metal-Oxide-Semiconductor Field-Effect Transistor, is classified as a voltage-controlled semiconductor device within the broader category of electronic components, regulates current flow between its Source and Drain terminals by applying a voltage to the Gate terminal. MOSFETs are extensively used in modern electronics, including Power Management,Power Amplification & Switching, etc.
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Main Product:
Semiconductor Device,
Electronic Components,
Power Inverter,
Wires and Cables ,
IGBT Module,
Power MOSFET
