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Puwei's Aluminum Nitride Ceramic Substrates are advanced thermal management solutions engineered for high-performance electronic systems. Manufactured using precision casting technology, these substrates provide exceptional thermal conductivity (≥175 W/m·K) and superior electrical insulation, making them ideal for demanding applications in electronic packaging, power devices, and high-frequency modules. Our vertically integrated production ensures consistent quality from raw materials to finished ceramic components.
Material: High-purity Aluminum Nitride (AlN). Thermal Conductivity: Standard grade ≥175 W/m·K, Premium grade ≥200 W/m·K. Thickness Range: 0.10 mm to 1.5 mm (minimum 0.10 mm). Electrical Properties: Volume resistivity >10¹⁴ Ω·cm, Dielectric strength >15 kV/mm. Mechanical Properties: Flexural strength >300 MPa. Temperature Range: -50°C to 400°C. CTE: Matched to silicon (4.5×10⁻⁶/K). Surface Finish: Ra ≤ 0.4 μm (polished). These properties ensure reliable performance in integrated circuit and high-power microelectronic component applications.
With thermal conductivity up to 200 W/m·K, our AlN substrates efficiently dissipate heat from high-density power devices and microwave components, preventing thermal runaway and extending device lifespan.
Supports DPC, DBC, AMB, thick film, and thin film printing, offering design flexibility for RF circuits, thick film hybrid microcircuits, and thermoelectric cooling assemblies.
Advanced casting technology ensures dimensional accuracy and surface quality. We offer customized thickness (down to 0.10 mm), surface finishes, and sizes up to 150×200 mm for sensor packaging and optoelectronics applications.
High dielectric strength and volume resistivity make it an excellent insulation element, ensuring safety and performance in high-voltage environments and microelectronics packaging.
Ideal for IGBT modules, power converters, and inverters as an insulation element and heat spreader, enhancing the reliability of high-power microelectronic components.
Provides low dielectric loss and stable performance for high-frequency modules, microwave applications, and RF power amplifiers in communication infrastructure.
Critical for microelectronics packaging, sensor packaging, and thermoelectric semiconductor module plates, enabling miniaturization with superior thermal management.
Used as a heat sink substrate for high-power LEDs, laser diodes, and other optoelectronics applications where efficient heat dissipation is crucial for performance and longevity.
Manufactured in ISO 9001:2015 certified facilities. Our vertically integrated process includes rigorous quality control at every stage—from raw material inspection to final product testing—ensuring that every AlN substrate meets the highest standards for ceramic chips and advanced electronic applications.
Puwei provides extensive customization to meet your exact specifications:
Our manufacturing excellence is built on a controlled process: High-purity AlN powder formulation → Precision casting and forming → Controlled sintering at high temperatures → Precision grinding and surface finishing → Comprehensive inspection (dimensional, thermal, electrical) → Packaging. Statistical process control (SPC) ensures batch-to-batch consistency, making our substrates reliable ceramic components for your most critical applications.
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Main Product:
Alumina Ceramic Substrates,
Aluminum Nitride Substrates,
Metallized Ceramics,
AlN Ceramics Disc,
DPC Substrate,
DBC Ceramic Substrate
